D32S6 Datasheet and Replacement
Type Designator: D32S6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
D32S6 Substitution
D32S6 Datasheet (PDF)
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Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , BD777 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .
History: 2PD601AW | M8050-D | BC308C-92
Keywords - D32S6 transistor datasheet
D32S6 cross reference
D32S6 equivalent finder
D32S6 lookup
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History: 2PD601AW | M8050-D | BC308C-92



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