D32S6 Datasheet. Specs and Replacement
Type Designator: D32S6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO92
D32S6 Substitution
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D32S6 datasheet
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Detailed specifications: D32P3, D32P4, D32S1, D32S10, D32S2, D32S3, D32S4, D32S5, BD333, D32S7, D32S8, D32S9, D32W10, D32W11, D32W12, D32W13, D32W14
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