D32S9 Datasheet. Specs and Replacement
Type Designator: D32S9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO92
D32S9 Substitution
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D32S9 datasheet
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Detailed specifications: D32S10, D32S2, D32S3, D32S4, D32S5, D32S6, D32S7, D32S8, BC547, D32W10, D32W11, D32W12, D32W13, D32W14, D32W7, D32W8, D32W9
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