All Transistors. 2N3444 Datasheet

 

2N3444 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3444

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N3444 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3444 Datasheet (PDF)

5.1. 2n3442g.pdf Size:65K _upd

2N3444
2N3444

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR • Excellent Second Breakdown Capabi

5.2. 2n3440dcsm.pdf Size:21K _upd

2N3444
2N3444

2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 2.29 ± 0.20 1.65 ± 0.13 1.40 ± 0.15 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2 3 • HERMETIC CERAMIC SURFACE

5.3. 2n3440csm4r.pdf Size:94K _upd

2N3444
2N3444

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 2N3439 2N3440 Symbols Parame

5.4. 2n3440ua.pdf Size:190K _upd

2N3444
2N3444

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440 JANTX 2N3439L * 2N3440L JANTXV

5.5. 2n3440c3a.pdf Size:94K _upd

2N3444
2N3444

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C • High Voltage • Hermetic Ceramic Surface Mount Package. • Variant B to MIL-PRF-19500/368 outline • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

5.6. 2n3440c3c.pdf Size:94K _upd

2N3444
2N3444

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C • High Voltage • Hermetic Ceramic Surface Mount Package. • Variant B to MIL-PRF-19500/368 outline • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

5.7. 2n3440c3b.pdf Size:94K _upd

2N3444
2N3444

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C • High Voltage • Hermetic Ceramic Surface Mount Package. • Variant B to MIL-PRF-19500/368 outline • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

5.8. 2n3442r7.pdf Size:135K _motorola

2N3444
2N3444

Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS Collector Emitter Sustaining Voltage

5.9. 2n3439 2n3440.pdf Size:47K _st

2N3444
2N3444

2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series r

5.10. 2n3442.pdf Size:61K _central

2N3444

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.11. 2n3442-d.pdf Size:65K _onsemi

2N3444
2N3444

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capability N

5.12. 2n3442-2n4347.pdf Size:197K _comset

2N3444
2N3444

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Sustaining Volta

5.13. 2n4347 2n3442.pdf Size:132K _mospec

2N3444
2N3444

A A A

5.14. 2n3441.pdf Size:13K _semelab

2N3444
2N3444

2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingArea Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLI

5.15. 2n3447.pdf Size:11K _semelab

2N3444

2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.16. 2n3445.pdf Size:11K _semelab

2N3444

2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.17. 2n3445.pdf Size:172K _jmnic

2N3444
2N3444

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.18. 2n3446.pdf Size:172K _jmnic

2N3444
2N3444

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.19. 2n3441.pdf Size:130K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·So

5.20. 2n3447.pdf Size:129K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

5.21. 2n3448.pdf Size:129K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

5.22. 2n3442.pdf Size:130K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

5.23. 2n3445.pdf Size:114K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

5.24. 2n3446.pdf Size:114K _inchange_semiconductor

2N3444
2N3444

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

Datasheet: 2N3440CSM4 , 2N3440L , 2N3440S , 2N3441 , 2N3441X , 2N3441Y , 2N3442 , 2N3443 , 2SC945 , 2N3444S , 2N3445 , 2N3446 , 2N3447 , 2N3448 , 2N3449 , 2N345 , 2N34-5 .

 


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