D44E3
Datasheet, Equivalent, Cross Reference Search
Type Designator: D44E3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 25
MHz
Collector Capacitance (Cc): 130
pF
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package:
TO220
D44E3
Transistor Equivalent Substitute - Cross-Reference Search
D44E3
Datasheet (PDF)
0.1. Size:80K motorola
mjd44e3r.pdf
Order this documentMOTOROLAby MJD44E3/DSEMICONDUCTOR TECHNICAL DATAMJD44E3**Motorola Preferred DeviceDarlington Power TransistorDPAK For Surface Mount Application NPN DARLINGTONSILICON. . . for general purpose power and switching output or driver stages in applicationsPOWER TRANSISTORsuch as switching regulators, converters, and power amplifiers.10 AMPERES80 VOLTS
0.2. Size:115K onsemi
njvmjd44e3.pdf
MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain
0.3. Size:115K onsemi
mjd44e3t4g.pdf
MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain
0.4. Size:90K cdil
mjd44e3.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN DARLINGTON PLASTIC POWER TRANSISTOR MJD44E3DPAK (TO-252)Plastic PackageFor General Purpose Power and Switching Output or Driver Stages in Applications such asSwitching Regulators, Converters and Power AmplifiersABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO 80Collector Em
0.5. Size:265K inchange semiconductor
mjd44e3.pdf
isc Silicon NPN Darlington Power Transistor MJD44E3DESCRIPTIONHigh DC Current Gain: hFE = 1000(Min)@ IC= 5ALow Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 5AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitching applicationsABSOLUTE MAXIMUM RATING
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.