All Transistors. D44H10 Datasheet

 

D44H10 Datasheet and Replacement


   Type Designator: D44H10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 180 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO220
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D44H10 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
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D44H10

isc Silicon NPN Power Transistors D44H10DESCRIPTIONLow Saturation VoltageFast Switching SpeedsComplement to Type D45H10Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicationssuch as switching regulators,converters and po

 9.1. Size:103K  motorola
d44h d45h d45h11 d44h11.pdf pdf_icon

D44H10

Order this documentMOTOROLAby D44H/DSEMICONDUCTOR TECHNICAL DATANPND44H Series*Complementary Silicon PowerPNPD45H Series*Transistors. . . for general purpose power amplification and switching such as output or driver*Motorola Preferred Devicestages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation V

 9.2. Size:192K  motorola
mjd44h11 mjd45h11.pdf pdf_icon

D44H10

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 9.3. Size:174K  st
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D44H10

D44H11FPD45H11FPComplementary power transistors .Features Low collector-emitter saturation voltage Fast switching speedApplications Power amplifier 321 Switching circuitsTO-220FPDescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral purpose linear an

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2660A | MRF5812 | CTP1340 | 2SC1623RLT1 | BC456C | MCH3245 | LDTA123EM3T5G

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