D60T5050 Specs and Replacement

Type Designator: D60T5050

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 885 W

Maximum Collector-Base Voltage |Vcb|: 550 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO62

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D60T5050 datasheet

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