2N1045-1 Specs and Replacement
Type Designator: 2N1045-1
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.225 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO31
2N1045-1 Substitution
- BJT ⓘ Cross-Reference Search
2N1045-1 datasheet
Detailed specifications: 2N1042-2, 2N1043, 2N1043-1, 2N1043-2, 2N1044, 2N1044-1, 2N1044-2, 2N1045, TIP42C, 2N1045-2, 2N1046, 2N1046A, 2N1046B, 2N1047, 2N1047A, 2N1047B, 2N1047C
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