DC5425 Datasheet and Replacement

   Type Designator: DC5425
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3000 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO51
      - BJT Cross-Reference Search