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DM50P Specs and Replacement

   Type Designator: DM50P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 77 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1000 MHz
   Noise Figure, dB: -

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