DT100-1100 Datasheet. Specs and Replacement

Type Designator: DT100-1100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1500 W

Maximum Collector-Base Voltage |Vcb|: 1100 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Collector Current |Ic max|: 200 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: SPECIAL

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DT100-1100 datasheet

 9.1. Size:222K  cn minos

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DT100-1100

Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R ... See More ⇒

Detailed specifications: DPT122, DPT123, DPT124, DPT2600, DQN1006, DR42R2-126, DR42R2-220, DT100-1000, 2N3055, DT100-1200, DT1003, DT100-800, DT100-900, DT1110, DT1111, DT1112, DT1120

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