All Transistors. DT100-800 Datasheet

 

DT100-800 Datasheet and Replacement


   Type Designator: DT100-800
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1500 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 750 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SPECIAL
 

 DT100-800 Substitution

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DT100-800 Datasheet (PDF)

 9.1. Size:222K  cn minos
 mpg100n06 mdt100n06 mps100n06.pdf pdf_icon

DT100-800

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

Datasheet: DPT2600 , DQN1006 , DR42R2-126 , DR42R2-220 , DT100-1000 , DT100-1100 , DT100-1200 , DT1003 , A1015 , DT100-900 , DT1110 , DT1111 , DT1112 , DT1120 , DT1121 , DT1122 , DT1311 .

History: 2N795 | BC298 | BCW30 | 2SA1353E | DC5415 | DC5422 | 3DD9E

Keywords - DT100-800 transistor datasheet

 DT100-800 cross reference
 DT100-800 equivalent finder
 DT100-800 lookup
 DT100-800 substitution
 DT100-800 replacement

 

 
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