DT100-900 Datasheet. Specs and Replacement
Type Designator: DT100-900
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1500 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 9
Package: SPECIAL
DT100-900 Substitution
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DT100-900 datasheet
mpg100n06 mdt100n06 mps100n06.pdf 
Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R ... See More ⇒
Detailed specifications: DQN1006, DR42R2-126, DR42R2-220, DT100-1000, DT100-1100, DT100-1200, DT1003, DT100-800, BC337, DT1110, DT1111, DT1112, DT1120, DT1121, DT1122, DT1311, DT1312
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