DT1603 Datasheet. Specs and Replacement
Type Designator: DT1603
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO5
DT1603 Substitution
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DT1603 datasheet
November 2013 FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 m Features Description RDS(on) = 121 m (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 156 m (Typ.) @ VGS = 5 V, ID = 1.8 A lored to minimize the on-state resistance and maintain superi... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
FDT1600N10A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ... See More ⇒
Detailed specifications: DT1322, DT1510, DT1511, DT1512, DT1520, DT1521, DT1522, DT1602, 2SD1047, DT1610, DT1612, DT1613, DT1621, DT200-700, DT200-800, DT200-900, DT3200
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