DT800-350 Datasheet and Replacement

   Type Designator: DT800-350
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3000 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 1000 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 9
   Noise Figure, dB: -
   Package: SPECIAL
      - BJT Cross-Reference Search