All Transistors. DTA115ESA Datasheet

 

DTA115ESA Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTA115ESA
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SC72

 DTA115ESA Transistor Equivalent Substitute - Cross-Reference Search

   

DTA115ESA Datasheet (PDF)

 ..1. Size:67K  rohm
dta115esa dta115eua.pdf

DTA115ESA
DTA115ESA

DTA115EM / DTA115EE / DTA115EUA Transistors DTA115EKA / DTA115ESA Digital transistors (built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA / DTA115ESA Equivalent circuit Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input R1 OUTINresistors (see equivalent circuit). R22) The bias resistors c

 6.1. Size:417K  nxp
pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf

DTA115ESA
DTA115ESA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.2. Size:139K  nxp
pdta115eef pdta115ek pdta115es.pdf

DTA115ESA
DTA115ESA

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 7.1. Size:183K  philips
pdta115e series.pdf

DTA115ESA
DTA115ESA

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 7.2. Size:954K  nxp
pdta115emb.pdf

DTA115ESA
DTA115ESA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.3. Size:1651K  rohm
dta115eca.pdf

DTA115ESA
DTA115ESA

DTA115ECADatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value SOT-23VCC-50VIC(MAX.)-100mA R1100k R2 (SST3) 100k lFeatures lInner circuitl l1) Built-In Biasing Resistors, R1 = R2 = 100k2) Built-in bias resistors ena

 7.4. Size:156K  rohm
dta115eeb.pdf

DTA115ESA
DTA115ESA

100mA / 50V Digital transistors (with built-in resistors) DTA115EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely in

 7.5. Size:141K  rohm
dta115e-ser dta115ee dta115eka.pdf

DTA115ESA
DTA115ESA

-100mA / -50V Digital transistors (with built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolatio

 7.6. Size:1385K  rohm
dta115eefra dta115ekafra dta115emfha dta115euafra.pdf

DTA115ESA
DTA115ESA

DTA115E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuratio

 7.7. Size:1291K  rohm
dta115em dta115eeb dta115ee dta115eub dta115eua dta115eka.pdf

DTA115ESA
DTA115ESA

DTA115E seriesDatasheetPNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-723 SOT-416FLVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (VMT3) (EMT3F)100k SOT-416 SOT-323FLlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the con

 7.8. Size:45K  rohm
dta115ee-eua-eka 19 sot346-323-416.pdf

DTA115ESA

DTA115EE / DTA115EUA / DTA115EKA / DTA115ESATransistorsTransistorsDTC115EE / DTC115EUA / DTC115EKA / DTC115ESA

 7.9. Size:104K  diodes
ddta115eca.pdf

DTA115ESA
DTA115ESA

DDTA (R1 = R2 SERIES) CAPNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free, RoHS Compliant (Note

 7.10. Size:227K  diodes
ddta115ee.pdf

DTA115ESA
DTA115ESA

DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)

 7.11. Size:175K  diodes
ddta115eua.pdf

DTA115ESA
DTA115ESA

DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N

 7.12. Size:181K  diodes
ddta115eka.pdf

DTA115ESA
DTA115ESA

DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95

 7.13. Size:406K  diodes
ddta123eca ddta143eca ddta114eca ddta124eca ddta144eca ddta115eca.pdf

DTA115ESA
DTA115ESA

DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R

 7.14. Size:99K  onsemi
dta115em3.pdf

DTA115ESA
DTA115ESA

MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains

 7.15. Size:99K  onsemi
nsvdta115eet1g.pdf

DTA115ESA
DTA115ESA

MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains

 7.16. Size:120K  onsemi
dta114em3t5g dta114tm3t5g dta114ym3t5g dta115em3t5g dta123em3t5g dta123jm3t5g dta124em3t5g dta124xm3t5g.pdf

DTA115ESA
DTA115ESA

DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

 7.17. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf

DTA115ESA
DTA115ESA

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 7.18. Size:195K  utc
dta115e.pdf

DTA115ESA
DTA115ESA

UNISONIC TECHNOLOGIES CO., LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an invertercircuit without connecting external input resistors (see the equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of

 7.19. Size:153K  cystek
dta115en3.pdf

DTA115ESA
DTA115ESA

Spec. No. : C257N3 Issued Date : 2003.12.26 CYStech Electronics Corp. Revised Date : 2004.01.15 Page No. : 1/4 PNP Digital Transistors (Built-in Resistors) DTA115EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w

 7.20. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf

DTA115ESA
DTA115ESA

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 7.21. Size:147K  lrc
ldta114em3t5g ldta114tm3t5g ldta114ym3t5g ldta115em3t5g ldta123em3t5g ldta123jm3t5g ldta124em3t5g ldta124xm3t5g.pdf

DTA115ESA
DTA115ESA

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLDTA114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi

 7.22. Size:99K  chenmko
chdta115eegp.pdf

DTA115ESA
DTA115ESA

CHENMKO ENTERPRISE CO.,LTDCHDTA115EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 7.23. Size:91K  chenmko
chdta115eugp.pdf

DTA115ESA
DTA115ESA

CHENMKO ENTERPRISE CO.,LTDCHDTA115EUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 7.24. Size:68K  chenmko
chdta115ekgp.pdf

DTA115ESA
DTA115ESA

CHENMKO ENTERPRISE CO.,LTDCHDTA115EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC5104 | CDQ10047

 

 
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