2N3506S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3506S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO31
2N3506S Transistor Equivalent Substitute - Cross-Reference Search
2N3506S Datasheet (PDF)
2n3506al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3506a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3506.pdf
Data Sheet No. 2N3506Generic Part Number:Type 2N35062N3506Geometry 1506Polarity NPNREF: MIL-PRF-19500/349Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 1506 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/349 whic
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
