2N3507X pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N3507X Specs and Replacement

Type Designator: 2N3507X

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO39

2N3507X Substitution

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2N3507X datasheet

8.1. Size:90K microsemi

2n3507a.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P... See More ⇒

8.2. Size:90K microsemi

2n3507al.pdf pdf_icon

8.3. Size:46K semicoa

2n3507.pdf pdf_icon

Data Sheet No. 2N3507 Generic Part Number Type 2N3507 2N3507 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are TO-39 per MIL-PRF-19500/3... See More ⇒

Detailed specifications: 2N3504, 2N3505, 2N3506, 2N3506L, 2N3506S, 2N3507, 2N3507L, 2N3507S, BDT88, 2N3508, 2N3509, 2N350A, 2N351, 2N3510, 2N3511, 2N3512, 2N3513