DTC123EKA Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC123EKA
SMD Transistor Code: 22
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SC59
SOT346
DTC123EKA Transistor Equivalent Substitute - Cross-Reference Search
DTC123EKA Datasheet (PDF)
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DTC123EM / DTC123EE / DTC123EUATransistors DTC123EKA / DTC123ESADigital transistors (built-in resistors)DTC123EM / DTC123EE / DTC123EUADTC123EKA / DTC123ESA Equivalent circuit Features1) Built-in bias resistors enable the configuration of aninverter circuit without connecting external inputOUTR1resistors (see equivalent circuit). IN2) The bias resistors consist of thin-f
dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdf
DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC50VIC(MAX.)100mA R12.2kDTC123EM DTC123EEDTC123EMFHA DTC123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k
ddtc123eka.pdf
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG
pdtc123eef pdtc123ek pdtc123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
chdtc123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
