DTL8755 Datasheet and Replacement

   Type Designator: DTL8755
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO63
      - BJT Cross-Reference Search