DTN9001 Datasheet. Specs and Replacement

Type Designator: DTN9001  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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DTN9001 datasheet

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Detailed specifications: DTL8751, DTL8752, DTL8753, DTL8754, DTL8755, DTN1006, DTN9000, DTN9000T, TIP31C, DTN9001T, DTS1010, DTS1020, DTS103, DTS105, DTS106, DTS107, DTS108

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