All Transistors. 2N3587 Datasheet

 

2N3587 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3587
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO77

 2N3587 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3587 Datasheet (PDF)

 9.2. Size:430K  central
2n3583 2n3584 2n3585.pdf

2N3587
2N3587

2N35832N3584www.centralsemi.com2N3585DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications.MARKING: FULL PART NUMBERTO-66 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITSCollector-Base Voltage VCBO 250 375 500 VCollector-Emitt

 9.3. Size:160K  comset
2n3583-2n3584-2n3585.pdf

2N3587
2N3587

NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N3583 250VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 4402N3583 175VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3

 9.4. Size:224K  bocasemi
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf

2N3587
2N3587

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com

 9.5. Size:130K  inchange semiconductor
2n3584.pdf

2N3587
2N3587

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection

 9.6. Size:181K  inchange semiconductor
2n3583.pdf

2N3587
2N3587

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switch

 9.7. Size:153K  inchange semiconductor
2n3585.pdf

2N3587
2N3587

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection

Datasheet: 2N3580 , 2N3581 , 2N3582 , 2N3583 , 2N3584 , 2N3584X , 2N3585 , 2N3586 , BD135 , 2N3588 , 2N3589 , 2N358A , 2N359 , 2N3590 , 2N3591 , 2N3592 , 2N3593 .

 

 
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