All Transistors. 2N3589 Datasheet

 

2N3589 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3589

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO37

2N3589 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3589 Datasheet (PDF)

5.1. 2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf Size:319K _rca

2N3589

5.2. 2n3583 2n3584 2n3585.pdf Size:430K _central

2N3589
2N3589

2N3583 2N3584 www.centralsemi.com 2N3585 DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITS Collector-Base Voltage VCBO 250 375 500 V Collector-Emitter V

 5.3. 2n3583-2n3584-2n3585.pdf Size:160K _comset

2N3589
2N3589

NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3583 250 VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 440 2N3583 175 VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 300 VEB

5.4. 2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf Size:224K _bocasemi

2N3589
2N3589

A Boca Semiconductor Corp. http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com

 5.5. 2n3585.pdf Size:153K _inchange_semiconductor

2N3589
2N3589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25? ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stage

5.6. 2n3584.pdf Size:130K _inchange_semiconductor

2N3589
2N3589

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25? ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stage

5.7. 2n3583.pdf Size:181K _inchange_semiconductor

2N3589
2N3589

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25? ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching r

Datasheet: 2N3582 , 2N3583 , 2N3584 , 2N3584X , 2N3585 , 2N3586 , 2N3587 , 2N3588 , BC548B , 2N358A , 2N359 , 2N3590 , 2N3591 , 2N3592 , 2N3593 , 2N3594 , 2N3595 .

 

 
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