ED1801N Datasheet, Equivalent, Cross Reference Search
Type Designator: ED1801N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 290
Noise Figure, dB: -
Package: TO92
ED1801N Transistor Equivalent Substitute - Cross-Reference Search
ED1801N Datasheet (PDF)
9.1. Size:50K philips
ed1802.pdf
ed1802.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186ED1802PNP general purpose transistor1999 Apr 27Product specificationSupersedes data of 1997 May 27Philips Semiconductors Product specificationPNP general purpose transistor ED1802FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 25 V).1 emitter2 baseAPPLICATIONS3 collector
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
