ED1801N Specs and Replacement
Type Designator: ED1801N
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 290
Package: TO92
ED1801N Substitution
- BJT ⓘ Cross-Reference Search
ED1801N datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1802 PNP general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Semiconductors Product specification PNP general purpose transistor ED1802 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1 emitter 2 base APPLICATIONS 3 collector ... See More ⇒
Detailed specifications: ED1702K, ED1702L, ED1702M, ED1702N, ED1801, ED1801K, ED1801L, ED1801M, 2SD669, ED1802, ED1802K, ED1802L, ED1802M, ED1802N, ED2502, ED592, ED8050
Keywords - ED1801N pdf specs
ED1801N cross reference
ED1801N equivalent finder
ED1801N pdf lookup
ED1801N substitution
ED1801N replacement
