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EN1132 Specs and Replacement

Type Designator: EN1132

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO106

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EN1132 datasheet

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Detailed specifications: EFT342, EFT343, EFT367, EFT373, EFT377, EJ5027, EL220-7128, EL622, BD140, EN1613, EN1711, EN2218, EN2219, EN2221, EN2222, EN2369, EN2369A

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