ESM855 Specs and Replacement
Type Designator: ESM855
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
ESM855 Substitution
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ESM855 datasheet
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Detailed specifications: ESM750A, ESM752, ESM752A, ESM753, ESM753A, ESM791, ESM796, ESM837, A940, ESM856, ESM857, ESM858, ESM870, ESM871, ESM952, ESM952A, ET10015
Keywords - ESM855 pdf specs
ESM855 cross reference
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History: ESM753A | ESM857 | 3DD275
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