FA1F4M Specs and Replacement

Type Designator: FA1F4M

SMD Transistor Code: L32_L33

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

 FA1F4M Substitution

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FA1F4M datasheet

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FA1F4M

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FA1F4M

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FA1F4M

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Detailed specifications: F2, F3, F4, F5, FA1A3Q, FA1A4M, FA1A4P, FA1A4Z, BC547, FA1F4N, FA1F4Z, FA1L3M, FA1L3N, FA1L4L, FA1L4M, FB2060A, FB2060B

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