FB4016 Specs and Replacement
Type Designator: FB4016
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO77
FB4016 Substitution
- BJT ⓘ Cross-Reference Search
FB4016 datasheet
isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: FB2060B, FB3423, FB3424, FB3726, FB3727, FB3728, FB3729, FB4015, 2SA1943, FBC737, FBC738, FBN36485, FC100M, FC105, FC106, FC107, FC108
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