FCX558 Datasheet, Equivalent, Cross Reference Search
Type Designator: FCX558
SMD Transistor Code: P58
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SOT89
FCX558 Transistor Equivalent Substitute - Cross-Reference Search
FCX558 Datasheet (PDF)
fcx558.pdf
FCX558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -400V Case: SOT89 IC = -200mA High Continuous Current Case Material: Molded Plastic. Green Molding Compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics up to -100mA Moisture Sensitivity: Level 1 per J-STD-020
fcx555.pdf
A Product Line of Diodes Incorporated FCX555 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Limit Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEV -180 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -0.7 A Peak Pulse Current ICM -2 A Thermal Characteristics (@
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DD128FH3D | 3DD13003_E6D
History: 3DD128FH3D | 3DD13003_E6D
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