FK3503 Datasheet and Replacement
Type Designator: FK3503
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: MICRO-T
FK3503 Substitution
FK3503 Datasheet (PDF)
fk350301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK350301Silicon N-channel MOS FETFor switching circuits Overview PackageFK350301 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) Pin
fk3506010l.pdf

Doc No. TT4-EA-12624Revision. 3Product StandardsMOS FETFK3506010LFK3506010LSilicon N-channel MOS FETUnit : mm For switching2.0FK330601 in SMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :CV0.9(0.65)(0.65) Packaging1.3 Emb
fk350601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK350601Silicon N-channel MOS FETFor switching circuits Overview PackageFK350601 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V) 2: Source High-spe
Datasheet: FK2369A , FK2484 , FK2894 , FK2894A , FK3014 , FK3299 , FK3300 , FK3502 , D882P , FK3962 , FK3964 , FK914 , FK918 , FM1613 , FM1711 , FM1893 , FM2242 .
History: BC858BDW | KRA524T | BUL147 | SE1002 | BU206A | BUP50 | 2SD2098S
Keywords - FK3503 transistor datasheet
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History: BC858BDW | KRA524T | BUL147 | SE1002 | BU206A | BUP50 | 2SD2098S



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