2N3661 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N3661 Specs and Replacement

   Type Designator: 2N3661
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

Electrical Characteristics

   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 275 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO5

2N3661 Substitution

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2N3661 datasheet

9.1. Size:299K fairchild semi
2n3663.pdf pdf_icon

2N3663 B TO-92 C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V V Collector-Base Voltage 30 V CBO ... See More ⇒

9.2. Size:229K no
2n3668.pdf pdf_icon

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9.3. Size:11K semelab
2n3665.pdf pdf_icon

2N3665 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1.0A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒

9.4. Size:181K inchange semiconductor
2n3667.pdf pdf_icon

isc Silicon NPN Power Transistor 2N3667 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

Detailed specifications: 2N3645 , 2N3646 , 2N3647 , 2N3648 , 2N365 , 2N3659 , 2N366 , 2N3660 , BD335 , 2N3662 , 2N3663 , 2N3664 , 2N3665 , 2N3666 , 2N3667 , 2N367 , 2N3671 .