All Transistors. 2N3661 Datasheet


2N3661 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3661

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 275 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO5

2N3661 Transistor Equivalent Substitute - Cross-Reference Search


2N3661 Datasheet (PDF)

9.1. 2n3663.pdf Size:299K _fairchild_semi


2N3663B TO-92CENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VV Collector-Base Voltage 30 VCBO

9.2. 2n3668.pdf Size:229K _no


 9.3. 2n3665.pdf Size:11K _semelab


2N3665Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1.0A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.4. 2n3667.pdf Size:181K _inchange_semiconductor


isc Silicon NPN Power Transistor 2N3667DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 2N3645 , 2N3646 , 2N3647 , 2N3648 , 2N365 , 2N3659 , 2N366 , 2N3660 , S9013 , 2N3662 , 2N3663 , 2N3664 , 2N3665 , 2N3666 , 2N3667 , 2N367 , 2N3671 .


Back to Top