FMMT415 Datasheet and Replacement

FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 260V (415) & 320V (417) UL Flammability Classification Rating 94V-0 BVCEO > 100V Moisture Sensitivity: Level 1 per J-STD-020

FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 50A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 150V UL Flammability Classification Rating 94V-0 BVCEO > 50V Moisture Sensitivity: Level 1 per J-STD-020 Specifically designed for Av

SOT SI I O A A T 6S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I DA SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

FMMT4124TRANSISTOR (NPN) SOT23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T

FMMT413SOT23 NPN silicon planar avalanche transistorSummaryV(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25ADescriptionThe FMMT413 is a NPN silicon planar bipolar transistor optimized foravalanche mode operation. Tight process control and low inductancepackaging combine to produce high current pulses with fast edges, idealfor laser diode driving.FeaturesC Avalanche mode opera