All Transistors. FMMT4888 Datasheet

 

FMMT4888 Datasheet and Replacement


   Type Designator: FMMT4888
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 160 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO236
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FMMT4888 Datasheet (PDF)

 8.1. Size:242K  diodes
 fmmt489.pdf pdf_icon

FMMT4888

A Product Line ofDiodes IncorporatedFMMT48930V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 30V Case: SOT-23 IC = 1A high Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. ICM Up to 4A Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics Up To 4A Moisture Sens

 8.2. Size:583K  slkor
 fmmt489.pdf pdf_icon

FMMT4888

FMMT489SMD Type ICSMD Type TransistorsMedium Power TransistorSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVery low equivalent on-resistance12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-emitter voltage VCEO 30 VEmitter-base v

 8.3. Size:427K  cn shikues
 fmmt489.pdf pdf_icon

FMMT4888

FMMT489NPN Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. SOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1 A Po

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History: 2SD1813 | BT2906 | BC216A | 2SC4367 | 2SC81 | 2SD1212R | 2SD232

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