FMMT4916 Datasheet and Replacement

FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case: SOT23 Case Material: Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 RCE(sat) = 195m for a

FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature Term

A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance

FMMT491Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Planar Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSHigh PerformanceCompliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 491 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBOCollector-emitter vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW

FMMT491 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

FMMT491COLLECTOR3General Purpose Transistor NPN Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO 60 VCollector-Emitter Breakdown VoltageV(BR)CBO 80 VEmitter-Base Breakdown VoltageV(BR)EBOV 5.0Collector Current IC A 1.0Peak Pulse Current ICmA 2.0Power Dissipat

SEMICONDUCTORFMMT491TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3Marking :491 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT23V Collector-Emitter Voltage 60 V CEOVEBO Emitter-Base Voltage 5 V COLLECTORIC Collector Current 1 A 3ICM Peak Pulse Current

SMD Type TransistorsNPN TransistorsFMMT491 (KMMT491)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1C1.Base2.EmitterB3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

FMMT491NPN Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT491NPN Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorMarking: 491Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT491TRANSISTOR (NPN) SOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 4 9 1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150