2SB1551 Datasheet and Replacement

   Type Designator: 2SB1551
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220FM

2SB1551 Substitution

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2SB1551 Datasheet (PDF)

..1. Size:111K inchange semiconductor
2sb1551.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1551 DESCRIPTION With TO-220Fa package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum

8.1. Size:184K toshiba
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8.2. Size:175K toshiba
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8.3. Size:177K toshiba
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8.4. Size:183K toshiba
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8.5. Size:52K panasonic
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Power Transistors2SB1553Silicon PNP epitaxial planar typeFor power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing automatic insertion with radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Param

8.6. Size:54K panasonic
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Power Transistors2SB1554Silicon PNP epitaxial planar typeFor power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High forward current transfer ratio hFE which has satisfactory linearity90Allowing automatic insertion with radial taping1.2 0.1 C1.0Absolute Maximum Ratings (TC=25C)2.25 0.20.65 0.1Parameter Symbol Ratings Unit0.35 0.1 1.05 0.1C

8.7. Size:155K jmnic
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JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER COND

8.8. Size:188K jmnic
2sb1559.pdf pdf_icon

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION With TO-3PN package Complement to type 2SD2389 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

8.9. Size:29K sanken-ele
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E(70)BDarlington 2SB1559Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions RatingsSymbol Ratings Unit Unit0.24.80.415.6ICBO AVCBO 160

8.10. Size:237K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor 2SB1558DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATING

8.11. Size:203K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1559DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2389Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and ge

8.12. Size:84K inchange semiconductor
2sb1550.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2mounting base 3 Emitter Absolute maximum ratings(Ta=25 )SYMBOL PARAMETER CONDITIONS VALUE

8.13. Size:219K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor 2SB1555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CComplement to Type 2SD2384Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25

8.14. Size:221K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor 2SB1556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CComplement to Type 2SD2385Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .