FN1A4M Specs and Replacement
Type Designator: FN1A4M
SMD Transistor Code: M33
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO236
FN1A4M Substitution
- BJT ⓘ Cross-Reference Search
FN1A4M datasheet
Detailed specifications: FMW7, FMW8, FMY1A, FMY3A, FMY4A, FMY5, FMY6, FN1A3Q, TIP2955, FN1A4P, FN1A4Z, FN1F4M, FN1F4N, FN1F4Z, FN1L3M, FN1L3N, FN1L3Z
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