FN1F4N Specs and Replacement

Type Designator: FN1F4N

SMD Transistor Code: M35

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO236

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FN1F4N datasheet

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Detailed specifications: FMY4A, FMY5, FMY6, FN1A3Q, FN1A4M, FN1A4P, FN1A4Z, FN1F4M, BC556, FN1F4Z, FN1L3M, FN1L3N, FN1L3Z, FN1L4L, FN1L4M, FN1L4Z, FOS100

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