FN1L3Z Specs and Replacement
Type Designator: FN1L3Z
SMD Transistor Code: M36_M37_M38
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO236
FN1L3Z Substitution
- BJT ⓘ Cross-Reference Search
FN1L3Z datasheet
Detailed specifications: FN1A4M, FN1A4P, FN1A4Z, FN1F4M, FN1F4N, FN1F4Z, FN1L3M, FN1L3N, BC547B, FN1L4L, FN1L4M, FN1L4Z, FOS100, FOS101, FOS102, FOS104, FP5010
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