FOS101 Specs and Replacement
Type Designator: FOS101
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO18
FOS101 Substitution
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FOS101 datasheet
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Detailed specifications: FN1F4Z, FN1L3M, FN1L3N, FN1L3Z, FN1L4L, FN1L4M, FN1L4Z, FOS100, 431, FOS102, FOS104, FP5010, FP50201, FP50301, FP50401, FP50501, FP50801
Keywords - FOS101 pdf specs
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