All Transistors. FT107A Datasheet

 

FT107A Datasheet and Replacement


   Type Designator: FT107A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 335
   Noise Figure, dB: -
   Package: TO18
 

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FT107A Datasheet (PDF)

 9.1. Size:118K  motorola
 mmft107t1rev3x.pdf pdf_icon

FT107A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

 9.2. Size:78K  onsemi
 mmft107t1.pdf pdf_icon

FT107A

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2256 | DRA9115T | KT355AM

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