FT3905 Datasheet, Equivalent, Cross Reference Search
Type Designator: FT3905
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
FT3905 Transistor Equivalent Substitute - Cross-Reference Search
FT3905 Datasheet (PDF)
aft3904.pdf
AFT3904 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA A
aft3906.pdf
AFT3906 Alfa-MOS Technology PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100mA. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless
ssft3904u.pdf
SSFT3904U Main Product Characteristics: VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw
ssft3906.pdf
SSFT3906Main Product Characteristics: VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.)ID 90A TO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
ssft3904.pdf
SSFT3904 Main Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
ssft3904j7-hf.pdf
SSFT3904J7-HFMain Product Characteristics: VDSS 30V RDS(on) 3m (typ.) ID 120APQFN5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1164
