FXT751 Datasheet, Equivalent, Cross Reference Search
Type Designator: FXT751
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
FXT751 Transistor Equivalent Substitute - Cross-Reference Search
FXT751 Datasheet (PDF)
fxt751.pdf
PNP SILICON PLANARFXT751MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i I TI I I i i i i i I T T E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V 8 V I I V I
fxt757.pdf
PNP SILICON PLANAR MEDIUM POWERFXT757HIGH VOLTAGE TRANSISTORISSUE 1 FEB 94 T V I V i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II
fxt755.pdf
PNP SILICON PLANARFXT755MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i i I E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V
fxt753.pdf
PNP SILICON PLANARFXT753MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i I TI I I i i i i i I T T i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
