FXT757SM Datasheet, Equivalent, Cross Reference Search
Type Designator: FXT757SM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SO96
FXT757SM Transistor Equivalent Substitute - Cross-Reference Search
FXT757SM Datasheet (PDF)
fxt757.pdf
PNP SILICON PLANAR MEDIUM POWERFXT757HIGH VOLTAGE TRANSISTORISSUE 1 FEB 94 T V I V i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II
fxt755.pdf
PNP SILICON PLANARFXT755MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i i I E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V
fxt751.pdf
PNP SILICON PLANARFXT751MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i I TI I I i i i i i I T T E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V 8 V I I V I
fxt753.pdf
PNP SILICON PLANARFXT753MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i I TI I I i i i i i I T T i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
