FZT755 Datasheet. Specs and Replacement
Type Designator: FZT755
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO236
FZT755 Substitution
- BJT ⓘ Cross-Reference Search
FZT755 datasheet
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A Product Line of Diodes Incorporated Green FZT753 100V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case SOT223 IC = -2A High Continuous Current Case Material Molded Plastic. Green Molding Compound; ICM = -6A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat) ... See More ⇒
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Detailed specifications: FZT692B, FZT694B, FZT696B, FZT704, FZT705, FZT749, FZT751, FZT753, D965, FZT757, FZT758, FZT788B, FZT789A, FZT790A, FZT792A, FZT795A, FZT796A
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