GBD266 Datasheet. Specs and Replacement

Type Designator: GBD266

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 GBD266 Substitution

- BJT ⓘ Cross-Reference Search

 

GBD266 datasheet

NO PDF data!

Detailed specifications: GA53194, GA53213, GA53233, GA53270, GBC109, GBD179, GBD189, GBD190, BC337, GBD267, GBD645, GBD646, GC100, GC101, GC102, GC103, GC104

Keywords - GBD266 pdf specs

 GBD266 cross reference

 GBD266 equivalent finder

 GBD266 pdf lookup

 GBD266 substitution

 GBD266 replacement