GC112 Datasheet. Specs and Replacement
Type Designator: GC112
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.07 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.125 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO5
GC112 Substitution
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GC112 datasheet
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Detailed specifications: GBD645, GBD646, GC100, GC101, GC102, GC103, GC104, GC111, TIP42C, GC115, GC116, GC117, GC118, GC120, GC121, GC122, GC123
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