GC223 Datasheet, Equivalent, Cross Reference Search
Type Designator: GC223
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
GC223 Transistor Equivalent Substitute - Cross-Reference Search
GC223 Datasheet (PDF)
sigc223t120r2cs.pdf
SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering
sigc223t120r2cl.pdf
SIGC223T120R2CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology IGBT-Modules 180m chipBSM150GB120DLC short circuit prove positive temperature coefficient GApplications: easy parallelingE drivesChip Type VCE ICn Die Size Package Ordering CodeQ67050-A4286-SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
