All Transistors. GC223 Datasheet

 

GC223 Datasheet and Replacement


   Type Designator: GC223
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

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GC223 Datasheet (PDF)

 0.1. Size:63K  infineon
 sigc223t120r2cs.pdf pdf_icon

GC223

SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering

 0.2. Size:120K  infineon
 sigc223t120r2cl.pdf pdf_icon

GC223

SIGC223T120R2CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology IGBT-Modules 180m chipBSM150GB120DLC short circuit prove positive temperature coefficient GApplications: easy parallelingE drivesChip Type VCE ICn Die Size Package Ordering CodeQ67050-A4286-SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CSD288R | CSAL1013 | BUY16 | C119 | 2SC1181 | 2SD365A | KT3129V9

Keywords - GC223 transistor datasheet

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