GE5061 Datasheet and Replacement
Type Designator: GE5061
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
GE5061 Substitution
GE5061 Datasheet (PDF)
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Datasheet: GE10015 , GE10016 , GE10020 , GE10021 , GE10022 , GE10023 , GE-193 , GE5060 , 2SD669 , GE5062 , GE55821 , GE56551 , GE6060 , GE6061 , GE6062 , GE6251 , GE6252 .
History: TMPA812M3 | 2SB332H | SF294B | 2SB333H | BCP51-10 | BRT60 | 2SC2174
Keywords - GE5061 transistor datasheet
GE5061 cross reference
GE5061 equivalent finder
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History: TMPA812M3 | 2SB332H | SF294B | 2SB333H | BCP51-10 | BRT60 | 2SC2174



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