2N373-33
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N373-33
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.08
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.01
A
Max. Operating Junction Temperature (Tj): 85
°C
Transition Frequency (ft): 12
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 95
Noise Figure, dB: -
Package: TO33-1
2N373-33
Transistor Equivalent Substitute - Cross-Reference Search
2N373-33
Datasheet (PDF)
9.2. Size:17K semelab
2n3738.pdf 
2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
9.3. Size:18K semelab
2n3735csm4.pdf
2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
9.4. Size:11K semelab
2n3734.pdf
2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.5. Size:178K microsemi
2n3735l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
9.6. Size:178K microsemi
2n3737ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
9.8. Size:210K semicoa
2n3737.pdf
2N3737Silicon NPN TransistorData SheetDescription Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual
Datasheet: 2N3727
, 2N3728
, 2N3729
, 2N373
, 2N3730
, 2N3731
, 2N3732
, 2N3733
, 2SD718
, 2N3734
, 2N3734A
, 2N3734S
, 2N3735
, 2N3735S
, 2N3736
, 2N3736A
, 2N3737
.
