2N1055 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N1055 Transistor Equivalent Substitute - Cross-Reference Search
2N1055 Datasheet (PDF)
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