2N1056 Datasheet and Replacement
Type Designator: 2N1056
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
Package: TO5
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2N1056 Datasheet (PDF)
stfw2n105k5.pdf

STFW2N105K5N-channel 1050 V, 6 typ., 1.5 A Zener-protected SuperMESH 5 Power MOSFET in a TO-3PF packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID PTOTSTFW2N105K5 1050 V 8 1.5 A 30 W111 Worldwide best FOM (figure of merit) Ultra low gate charge3 100% avalanche tested21 Zener-protectedTO-3PFApplications Switching
std2n105k5 stp2n105k5 stu2n105k5.pdf

STD2N105K5, STP2N105K5, STU2N105K5N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTAB3Order codes VDS RDS(on) max ID PTOT1STD2N105K5DPAKSTP2N105K5 1050 V 8 1.5 A 60 WTABSTU2N105K5TAB Industrys lowest RDS(on) x area Industrys best figure of merit (FoM)33221
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
Datasheet: 2N1050A , 2N1050B , 2N1050C , 2N1051 , 2N1052 , 2N1053 , 2N1054 , 2N1055 , 2SC2625 , 2N1057 , 2N1058 , 2N1059 , 2N106 , 2N1060 , 2N1065 , 2N1066 , 2N1067 .
History: UN9217R | TN2716 | ECG2306
Keywords - 2N1056 transistor datasheet
2N1056 cross reference
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History: UN9217R | TN2716 | ECG2306



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